Spreading and Curing Behaviors of a Thermosetting Droplet-Silicone on a Heated Surface

Thermosetting materials are widely used as encapsulation in the electrical packaging to protect the core electronic components from external force, moisture, dust, and other factors. However, the spreading and curing behaviors of such kind of fluid on a heated surface have been rarely explored. In this study, we experimentally and numerically investigated the spreading and curing behaviors of the silicone(OE6550 A/B, which is widely used in the light-emitting diode packaging) droplet with diameter of ～2.2 mm on a heated surface with temperature ranging from 25 ℃ to 250 ℃. For the experiments, we established a setup with high-speed camera and heating unit to capture the fast spreading process of the silicone droplet on the heated surface. For the numerical simulation, we built a viscosity model of the silicone by using the Kiuna's model and combined the viscosity model with the Volume of Fluid(VOF) model by the User Defined Function(UDF) method. The results show that the surface temperature significantly affected the spreading behaviors of the silicone droplet since it determines the temperature and viscosity distribution inside the droplet. For surface temperature varied from 25 ℃ to 250 ℃, the final contact radius changed from ～2.95 mm to ～1.78 mm and the total spreading time changed from ～511 s to ～0.15 s. By further analyzing the viscosity evolution of the droplet, we found that the decreasing of the total spreading time was caused by the decrease of the viscosity under high surface temperature at initial spreading stage, while the reduction of the final contact radius was caused by the curing of the precursor film. This study supplies a strategy to tuning the spreading and curing behavior of silicone by imposing high surface temperature, which is of great importance to the electronic packaging.     

Threshold privacy-preserving cloud auditing with multiple uploaders

International Journal of Information Security - Data integrity is a critical security issue in cloud storage. The data integrity checking schemes by a third-party auditor (TPA) have attracted a lot...     

气藏型储气库注气期试井分析探讨

针对气藏型储气库注采井注采过程中储层物性参数影响因素不明确、注采能力不对称的问题。基于相国寺储气库井下连续油管试井测试结果,提出储气库注气期“温降效应”、“变表皮效应”的概念,分析了储气库注采过程中温降效应、变表皮效应以及储层应力敏感对注采的影响。通过气藏型储气库注气期试井分析技术,研究各因素在试井曲线上的响应特征以及对试井解释参数的影响。结果表明:①相对于采气期试井测试,注气期测试得到的储层物性参数具有同样的参考价值;②储气库温降效应对于试井解释结果的影响可忽略不计,而在不同注采运行周期内,变表皮效应以及应力敏感效应影响差异较大;③编制储气库注采运行方案时应充分考虑变表皮效应与应力敏感的影响,在不同注采运行周期内开展试井测试获取准确的储层参数值。研究成果为储气库试井测试与解释提供了重要的研究依据和理论指导。     

Fabrication and characterizations of Cr3+-doped ZnGa2O4 transparent ceramics with persistent luminescence

0.5 at.% Cr:ZnGa₂O₄ precursor was synthesized by the co-precipitation method with nitrates as raw materials, using ammonium carbonate as the precipitant. Low-agglomerated Cr:ZnGa₂O₄ powders with an average particle size of 43 nm were obtained by calcining the precursor at 900℃ for 4 h. Using the powders as starting materials, 0.5 at.% Cr:ZnGa₂O₄ ceramics with an average grain size of about 515 nm were prepared by presintering at 1150℃ for 5 h in air and HIP post-treatment at 1100℃ for 3 h under 200 MPa Ar. The in-line transmittance of 0.5 at.% Cr:ZnGa₂O₄ ceramics with a thickness of 1.3 mm reaches 59.5% at the wavelength of 700 nm. The Cr:ZnGa₂O₄ ceramics can be effectively excited by visible light and produce persistent luminescence at 700 nm. For Cr:ZnGa₂O₄ transparent ceramics, the brightness of afterglow was larger than 0.32 mcd/m² after 30 min, which is far superior to that of Cr:ZnGa₂O₄ persistent luminescence powders.     

30Cr13不锈钢冶炼过程夹杂物控制技术

  针对30Cr13生产过程中存在的轧材非金属夹杂物合格率偏低仅85%左右的问题，通过对30Cr13不锈钢精炼过程钢中非金属夹杂物存在形态进行分析，并结合现有精炼工艺制度，在实验室研究的基础上制定了不锈钢精炼过程非金属夹杂物控制方案。工业应用后，精炼结束钢中大于5 μm的非金属夹杂物总数、形状以及尺寸等参数均得到了有效改善，钢水洁净度大大提高。     

Beam and image experiment of beam deflection electron gun for distributed X-ray sources

Distributed X-ray sources comprise a single vacuum chamber containing multiple X-ray sources that are triggered and emit X-rays at a specific time and location. This process facilitates an application for innovative system concepts in X-ray and computer tomography. This paper proposes a novel electron beam focusing, shaping,and deflection electron gun for distributed X-ray sources.The electron gun uses a dispenser cathode as an electron emitter, a mesh grid to control emission current, and two electrostatic lenses for beam shaping, focusing, and deflection. Novel focusing and deflecting electrodes were designed to increase the number of focal spots in the distributed source. Two identical half-rectangle opening electrodes are controlled by adjusting the potential of the two electrodes to control the electron beam trajectory, and then, multifocal spots are obtained on the anode target. The electron gun can increase the spatial density of the distributed X-ray sources, thereby improving the image quality. The beam experimental results show that the focal spot sizes of the deflected(deflected amplitude 10.5 mm)and non-deflected electron beams at full width at half maximum are 0.80 mm 90.50 mm and 0.55 mm 90.40 mm, respectively(anode voltage 160 kV; beam current 30 mA). The imaging experimental results demonstrate the excellent spatial resolution and time resolution of an imaging system built with the sources, which has an excellent imaging effect on a field-programmable gate array chip and a rotating metal disk.     

Structural,optical and electrical properties of indium doped Cu2ZnSn(S,Se)4 thin films synthesized by the DC and RF reactive magnetron cosputtering

Element doping into the Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber is an effective method to optimize the performance of thin film solar cells. In this study, the Cu₂In_xZn_1-xSn(S,Se)₄ (CIZTSSe) precursor film was deposited by magnetron cosputtering technique using indium (In) and quaternary Cu₂ZnSnS₄ (CZTS) as targets. Meanwhile, the In content was controlled using the direct current (DC) power on In target (P_In). A single kesterite CIZTSSe alloy was formed by successfully doping a small number of In³⁺ into the main lattice of CZTSSe. The partial Zn²⁺ cations were substituted by In³⁺ ions, resulting in improving properties of CZTSSe films. Morphological analysis showed that large grain CIZTSSe films could be obtained by doping In. The well-distributed, smooth, and dense film was obtained when the P_In was 30 W. The band gap of CIZTSSe could be continuously adjusted from 1.27 to 1.05 eV as P_In increased from 0 to 40 W. In addition, the CIZTSSe alloy thin film at P_In = 30 W exhibited the best p-type conductivity with Hall mobility of 6.87 cm²V^?1s^?1, which is a potential material as the absorption layer of high-performance solar cells.     

Analysis and optimization of high-power pulse transformer for SXFEL

Longitudinal injection is a promising on-axis injection scheme for diffraction-limited storage rings. In the latest version of the Hefei advanced light source(HALS), both the dynamic aperture and momentum aperture have been optimized. A longitudinal injection scheme was investigated on the HALS using a doublefrequency radio frequency system. To evaluate the injection performance, various errors were considered. A series of tracking simulations were conducted, and the injection efficiency was obtained under different error levels.     

Closure of Internal Porosity in Continuous Casting Bloom During Heavy Reduction Process

Metallurgical and Materials Transactions B - To investigate the closure behavior of internal porosity (also referred to as internal void) in continuous casting bloom during heavy reduction (HR) and...